Fabrication of Pb(ZrTi)O3 thin films by liquid delivery MOCVD using a cocktail source with Pb(DPM)2, Zr(MMP)4 and Ti(MMP)4

被引:2
作者
Otani, Y [1 ]
Nakamura, K [1 ]
Okamura, S [1 ]
Shiosaki, T [1 ]
机构
[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan
关键词
PZT; thin film; liquid delivery MOCVD; cocktail; MMP;
D O I
10.1080/10584580490895743
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ferroelectric PZT thin films were deposited by liquid delivery MOCVD using a novel cocktail solution. The cocktail solution consisted of Pb(DPM)(2), Zr(MMP)(4) and Ti(MMP)(4) diluted with ECH. This cocktail solution was stable at least 6 months and perfectly vaporized above 270degreesC. The precursors of the constituent of this cocktail solution had close thermal decomposition temperatures. Although the deposited films were crystallized into perovskite PZT phase at the substrate temperatures ranging from 475degreesC to 600degreesC, the only films deposited at the substrate temperature of 550degreesC were crystallized into perovskite PZT single phase. The PZT thin films deposited at the substrate temperature of 550degreesC showed good hysteresis properties with the 2P(r) of 72 muC/cm(2) and the 2E(c) of 144 kV/cm.
引用
收藏
页码:105 / +
页数:19
相关论文
共 17 条
[1]   Metal-organic chemical vapor deposition and characterization of strontium bismuth tantalate (SBT) thin films [J].
Burgess, D ;
Schienle, F ;
Lindner, J ;
Schumacher, M ;
Juergensen, H ;
Solayappan, N ;
McMillan, L ;
de Araujo, CP ;
Uchiyama, K ;
Otsuki, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (9B) :5485-5488
[2]  
BUSKIRK P, 1998, INTEGR FERROELECTR, V21, P273
[3]   Characteristics of ferroelectric SrBi2Ta2O9 thin films grown by ''Flash'' MOCVD [J].
Isobe, C ;
Ami, T ;
Hironaka, K ;
Watanabe, K ;
Sugiyama, M ;
Nagel, N ;
Katori, K ;
Ikeda, Y ;
Gutleben, CD ;
Tanaka, M ;
Yamoto, H ;
Yagi, H .
INTEGRATED FERROELECTRICS, 1997, 14 (1-4) :95-103
[4]   MOCVD of PZT thin films with different precursor solutions for testing mass-production compatibility [J].
Jeong, SW ;
Shi-Zhao, J ;
Kim, HR ;
Park, DY ;
Hwang, CS ;
Han, YK ;
Yang, CH ;
Oh, KY ;
Kim, SH ;
Lee, DS ;
Ha, JW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (10) :C678-C687
[5]   Fabrication of ferroelectric Pb(Zr,Ti)O3 thin films by liquid delivery metalorganic chemical vapor deposition [J].
Miyake, M ;
Lee, K ;
Kawasaki, S ;
Ueda, Y ;
Okamura, S ;
Shiosaki, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (01) :241-244
[6]   PREPARATION OF PB(ZR,TI)O-3 THIN-FILMS ON ELECTRODES INCLUDING IRO2 [J].
NAKAMURA, T ;
NAKAO, Y ;
KAMISAWA, A ;
TAKASU, H .
APPLIED PHYSICS LETTERS, 1994, 65 (12) :1522-1524
[7]   Influence of Pt/TiO2 bottom electrodes on the properties of ferroelectric Pb(Zr,Ti)O3 thin films [J].
Okamura, S ;
Abe, N ;
Otani, Y ;
Shiosaki, T .
INTEGRATED FERROELECTRICS, 2003, 52 :127-136
[8]   Influence of post-annealing on the characteristics of Pb(Zr,Ti)O3 thin films deposited by liquid delivery MOCVD using a cocktail solution [J].
Otani, Y ;
Abe, N ;
Okamura, S ;
Shiosaki, T .
INTEGRATED FERROELECTRICS, 2003, 59 :1475-1482
[9]   Fabrication of Pb(Zr,Ti)O3 thin films by liquid delivery MOCVD using a cocktail source with Pb(METHD)2, Zr(METHD)4 and Ti(MPD)(METHD)2 [J].
Otani, Y ;
Abe, N ;
Ueda, Y ;
Miyake, M ;
Okamura, S ;
Shiosaki, T .
INTEGRATED FERROELECTRICS, 2003, 51 :63-72
[10]   Structural characterization and 90° domain contribution to ferroelectricity of epitaxial Pb(Zr0.35,Ti0.65)O3 thin films [J].
Saito, K ;
Kurosawa, T ;
Akai, T ;
Oikawa, T ;
Funakubo, H .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) :545-550