GeSn-Based Multiple-Quantum-Well Photodetectors for Mid-Infrared Sensing Applications

被引:23
作者
Kumar, Harshvardhan [1 ]
Pandey, Ankit Kumar [2 ]
机构
[1] LNM Inst Informat Technol, Jaipur 302031, Rajasthan, India
[2] Bennett Univ, Dept Elect & Commun Engn, Noida 201310, India
关键词
Mid-infrared; Si photonics; GeSn; sensing; high-responsivity; photodetectors; quantum wells; SEMICONDUCTORS; PHOTODIODES; DETECTORS; SILICON;
D O I
10.1109/TNB.2021.3136571
中图分类号
Q5 [生物化学];
学科分类号
071010 ; 081704 ;
摘要
Silicon (Si)-based mid-infrared (MIR) photonics has promising potential for realizing next-generation ultra-compact spectroscopic systems for various applications such as label-free and damage-free gas sensing, medical diagnosis, and defense. The epitaxial growth of Ge1-xSnx alloy on Si substrate provides the promising technique to extend the cut-off wavelength of Si photonics to MIR range by Sn alloying. Here, we present the theory and simulation of heterojunction p-i-n MIR photodetectors (PDs) with Ge0.87Sn0.13/Ge0.92Sn0.(08) quantumwells with an additional Geom 5110 . 0g layer to elongate the photoabsorption path in the MIR spectrum. The incorporation of OW pairs (N) enables the light-matter interaction due to the carrier and optical confinement in the active region. As a result, the spectral response of the device is enhanced in the MIR range. Devices with varying N were compared in terms of various figure-of merits including dark-current, a photocurrent-to-dark current ratio, detectivity, spectral responsivity, and noise equivalent power (NEP). Additionally, parasitic capacitance-dependent RC and 3dB bandwidth were also studied using a small-signal equivalent circuit model. The proposed device exhibited the extended photodetection wavelength at similar to 3370 nm and I-ph/I-dark up to similar to 7.3 x 10(3 )with a dark current of similar to 56.3 nA for N = 8 at 300 K. At a bias of -3V, the proposed device achieved the spectral responsivity of 0.86 A/W at 2870 nm and 0.55 NW at 3300 nm, detectivity more than 2.5 x 10(9) Jones and a NEP less than 2.1 x 10(-13) WHz(-0.5 )for N = 8 at 3250 nm. The calculated 3dB bandwidth of 47.8 GHz, the signal-to-noise ratio (SNR), and linear dynamic range (LDR) of 93 dB and 74 dB were achieved at 3300 nm for N = 8. Thus, these results indicatethat the proposed GeSn-based OW p-i-n PDs pave the pathway towards the realization of new and high-performance detectors for sensing in the MIR regime.
引用
收藏
页码:175 / 183
页数:9
相关论文
共 57 条
[41]   Mid-infrared materials and devices on a Si platform for optical sensing [J].
Singh, Vivek ;
Lin, Pao Tai ;
Patel, Neil ;
Lin, Hongtao ;
Li, Lan ;
Zou, Yi ;
Deng, Fei ;
Ni, Chaoying ;
Hu, Juejun ;
Giammarco, James ;
Soliani, Anna Paola ;
Zdyrko, Bogdan ;
Luzinov, Igor ;
Novak, Spencer ;
Novak, Jackie ;
Wachtel, Peter ;
Danto, Sylvain ;
Musgraves, J. David ;
Richardson, Kathleen ;
Kimerling, Lionel C. ;
Agarwal, Anuradha M. .
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2014, 15 (01)
[42]   Band structure of Ge1-xSnx alloy: a full-zone 30-band k.p model [J].
Song, Zhigang ;
Fan, Weijun ;
Tan, Chuan Seng ;
Wang, Qijie ;
Nam, Donguk ;
Zhang, Dao Hua ;
Sun, Greg .
NEW JOURNAL OF PHYSICS, 2019, 21 (07)
[43]   Systematic study of Si-based GeSn photodiodes with 2.6 μm detector cutoff for short-wave infrared detection [J].
Thach Pham ;
Du, Wei ;
Huong Tran ;
Margetis, Joe ;
Tolle, John ;
Sun, Greg ;
Soref, Richard A. ;
Naseem, Hameed A. ;
Li, Baohua ;
Yu, Shui-Qing .
OPTICS EXPRESS, 2016, 24 (05) :4519-4531
[44]   Ultrafast 2D IR spectroscopy of the excess proton in liquid water [J].
Thaemer, Martin ;
De Marco, Luigi ;
Ramasesha, Krupa ;
Mandal, Aritra ;
Tokmakoff, Andrei .
SCIENCE, 2015, 350 (6256) :78-82
[45]   Roadmap on silicon photonics [J].
Thomson, David ;
Zilkie, Aaron ;
Bowers, John E. ;
Komljenovic, Tin ;
Reed, Graham T. ;
Vivien, Laurent ;
Marris-Morini, Delphine ;
Cassan, Eric ;
Virot, Leopold ;
Fedeli, Jean-Marc ;
Hartmann, Jean-Michel ;
Schmid, Jens H. ;
Xu, Dan-Xia ;
Boeuf, Frederic ;
O'Brien, Peter ;
Mashanovich, Goran Z. ;
Nedeljkovic, M. .
JOURNAL OF OPTICS, 2016, 18 (07)
[46]   Systematic study of Ge1-xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics [J].
Tran, Huong ;
Du, Wei ;
Ghetmiri, Seyed A. ;
Mosleh, Aboozar ;
Sun, Greg ;
Soref, Richard A. ;
Margetis, Joe ;
Tolle, John ;
Li, Baohua ;
Naseem, Hameed A. ;
Yu, Shui-Qing .
JOURNAL OF APPLIED PHYSICS, 2016, 119 (10)
[47]   GeSn lateral p-i-n waveguide photodetectors for mid-infrared integrated photonics [J].
Tsai, Cheng-Hsun ;
Lin, Kuan-Chih ;
Cheng, Chin-Yuan ;
Lee, Kuo-Chih ;
Cheng, H. H. ;
Chang, Guo-En .
OPTICS LETTERS, 2021, 46 (04) :864-867
[48]   GeSn-based p-i-n photodiodes with strained active layer on a Si wafer [J].
Tseng, H. H. ;
Li, H. ;
Mashanov, V. ;
Yang, Y. J. ;
Cheng, H. H. ;
Chang, G. E. ;
Soref, R. A. ;
Sun, G. .
APPLIED PHYSICS LETTERS, 2013, 103 (23)
[49]   High-speed and high-responsivity p-i-n waveguide photodetector at a 2 μm wavelength with a Ge0.92Sn0.08/Ge multiple-quantum-well active layer [J].
Wang, Haibo ;
Zhang, Jishen ;
Zhang, Gong ;
Chen, Yue ;
Huang, Yi-Chiau ;
Gong, Xiao .
OPTICS LETTERS, 2021, 46 (09) :2099-2102
[50]   GeSn on Insulators (GeSnOI) Toward Mid-infrared Integrated Photonics [J].
Wang, Xiaoxin ;
Covian, Alejandra Cuervo ;
Je, Lisa ;
Fu, Sidan ;
Li, Haofeng ;
Piao, James ;
Liu, Jifeng .
FRONTIERS IN PHYSICS, 2019, 7 (SEP)