Low Breakdown Voltage CMOS Compatible p-n Junction Avalanche Photodiode

被引：0
|
作者：
Hossain, Md. Mottaleb [1 ,2 ]
Zarkesh-Ha, Payman [1 ,2 ]
David, John P. R. [3 ]
Hayat, Majeed M. [1 ,2 ]
机构：
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
[2] Univ New Mexico, Dept Elect & Comp Engn, Albuquerque, NM 87106 USA
[3] Univ Sheffield, Elect & Elect Engn Dept, Sheffield S1 3JD, S Yorkshire, England
来源：
2014 IEEE PHOTONICS CONFERENCE (IPC) | 2014年
关键词：
CMOS; silicon; dead space; avalanche photodiodes; breakdown; smart lighting;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Breakdown voltage, mean gain and excess noise factor of CMOS-compatible p-n junction silicon avalanche photodiodes are predicted using the dead space multiplication theory. Measured dark current and breakdown voltages are also reported supporting low-voltage operation.
引用
收藏
页码：170 / 171
页数：2
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