Cu/CaF2/diamond metal-insulator-semiconductor field-effect transistor utilizing self-aligned gate fabrication process

被引：36

作者：

Umezawa, H

Taniuchi, H

Arima, T

Tachiki, M

Tsugawa, K

Yamanaka, S

Takeuchi, D

Okushi, H

Kawarada, H

机构：

[1] Waseda Univ, Sch Sci & Engn, Shinjuku Ku, Tokyo 1690072, Japan

[2] Electrotech Lab, ETL, Tsukuba, Ibaraki 3058568, Japan

[3] JST, Japan Sci & Technol Corp, CREST, Chiyoda Ku, Tokyo 1020081, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2000年 / 39卷 / 9AB期

关键词：

diamond; MISFET; hydrogen-terminated surface; CaF2;

D O I：

10.1143/JJAP.39.L908

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-performance metal-insulator-semiconductor field-effect transistors (MIS FET) on hydrogen-terminated homoepitaxial diamond films are demonstrated. The gate insulator is evaporated CaF2 which does not cause interface stales. This is the first study of a CaF2/diamond MISFET fabricated by a self-aligned gate fabrication process by which the gate length and the source gate spacing are effectively reduced. The maximum transconductance is 86 mS/mm, which is the highest value in diamond MISFETs at present.

引用

页码：L908 / L910

页数：3

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