Metal Oxide Semiconductor Nanostructure Gas Sensors with Different Morphologies

被引:69
作者
Mirzaei, Ali [1 ]
Ansari, Hamid Reza [2 ]
Shahbaz, Mehrdad [3 ]
Kim, Jin-Young [4 ]
Kim, Hyoun Woo [5 ,6 ]
Kim, Sang Sub [4 ]
机构
[1] Shiraz Univ Technol, Dept Mat Sci & Engn, Shiraz 7155713876, Iran
[2] Shiraz Univ Technol, Dept Elect & Elect Engn, Shiraz 7155713876, Iran
[3] Urmia Univ, Dept Mat Sci & Engn, Orumiyeh 5766151818, Iran
[4] Inha Univ, Dept Mat Sci & Engn, Incheon 22212, South Korea
[5] Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea
[6] Hanyang Univ, Res Inst Ind Sci, Seoul 04763, South Korea
关键词
semiconductor; metal oxide; morphology; gas sensor; sensing mechanism; CORE-SHELL NANOWIRES; SNO2 QUANTUM DOTS; SENSING PROPERTIES; ZNO NANORODS; LOW-POWER; AIR-POLLUTION; HYDROTHERMAL SYNTHESIS; IN2O3; NANOFIBERS; NO2; PERFORMANCE;
D O I
10.3390/chemosensors10070289
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
There is an increasing need for the development of low-cost and highly sensitive gas sensors for environmental, commercial, and industrial applications in various areas, such as hazardous gas monitoring, safety, and emission control in combustion processes. Considering this, resistive-based gas sensors using metal oxide semiconductors (MOSs) have gained special attention owing to their high sensing performance, high stability, and low cost of synthesis and fabrication. The relatively low final costs of these gas sensors allow their commercialization; consequently, they are widely used and available at low prices. This review focuses on the important MOSs with different morphologies, including quantum dots, nanowires, nanofibers, nanotubes, hierarchical nanostructures, and other structures for the fabrication of resistive gas sensors.
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页数:23
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