Parametric Variation Analysis of Symmetric Double Gate Charge Plasma JLTFET for Biosensor Application

Nanoscale devices have great potential for providing a platform for detecting biomolecules. There are a number of difficulties observed during the fabrication process of these devices, such as random dopant fluctuation, thermal budget, and so on. To cut down these problems, charge-plasma-based concept is introduced. This paper proposes the implementation of chargeplasma-based gate underlap dielectric modulated junctionless tunnel field-effect transistor (CPB DM-JLTFET) for the label free electrical recognition of biomolecules like cell, enzyme, deoxyribonucleic acid, protein, and so on via incorporating the dielectric modulation technique. A gate underlap region is formed in the device via etching oxide material. Label free detection of biomolecules depends upon the electrical property of biomolecules. The effect of device parameters such as cavity length and cavity thickness on surface potential, subthreshold slope, I-ON/ I-OFF ratio, and their sensitivity have been discussed. This paper investigates the performance of CPB DM-JLTFET for biomolecule sensing applications while varying dielectric constant, surface density, cavity length, and cavity thickness at different biasing conditions. The device proposed is implemented and simulated by using an ATLAS device simulator.