Charge sensing in intrinsic silicon quantum dots

被引：23
作者：
Podd, G. J. [1 ]
Angus, S. J. [2 ]
Williams, D. A. [1 ]
Ferguson, A. J. [3 ]
机构：
[1] Univ Cambridge, Cavendish Lab, Hitachi Cambridge Lab, Cambridge CB3 0HE, England
[2] Univ Melbourne, Sch Phys, Ctr Quantum Comp Technol, Melbourne, Vic 3010, Australia
[3] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 08期
基金：
澳大利亚研究理事会;
关键词：
electrometers; elemental semiconductors; semiconductor quantum dots; sensors; silicon; single electron transistors; ELECTRON-SPIN; COULOMB-BLOCKADE; DONORS;
D O I：
10.1063/1.3318463
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report charge sensing measurements on a silicon quantum dot with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that as an additional electron is added onto the quantum dot, a charge is induced on the SET of approximately 0.2e. These measurements are performed in the many electron regime, where we can count in excess of 20 charge additions onto the quantum dot.
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页数：3
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