Flexible ZnO Thin-Film Transistors on Thin Copper Substrate

被引：16

作者：

Huo, Wenxing ^{[1
,2
]}

Mei, Zengxia ^{[1
]}

Zhao, Minglong ^{[1
,2
]}

Sui, Yanxin ^{[1
,2
]}

Zhao, Bin ^{[1
,2
]}

Zhang, Yonghui ^{[1
,2
]}

Wang, Tao ^{[1
]}

Cui, Shujuan ^{[1
,2
]}

Liang, Huili ^{[1
]}

Jia, Haiqiang ^{[1
]}

Du, Xiaolong ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Key Lab Renewable Energy, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Cu substrate; flexible electronics; thin-film transistors (TFTs); zinc oxide (ZnO); GRAPHENE FILMS; IGZO TFTS; PERFORMANCE; FOILS; DIODES; GROWTH; LAYER;

D O I：

10.1109/TED.2018.2859277

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report the fabrication of flexible ZnO thin-film transistors (TFTs) on the 25-mu m-thick copper substrate. The Cu substrate compatible with high-temperature processes was deposited by electroplating, which led to a smooth surface. The ZnO layer was deposited at room temperature, and a thermal annealing process was conducted at 300 degrees C in the air after the fabrication of TFTs. The threshold voltage, hysteresis voltage, and contact resistance are improved after annealing, whereas the mobility, subthreshold swing, and ON/OFF ratio are barely changed. The stabilities of ZnO TFTs are also enhanced, evidenced by the smaller threshold voltage shifts induced by positive and negative gate bias stresses. The field-effect mobility, threshold voltage, and subthreshold swing are stable even when exposed to a mechanical tensile strain up to 1.25% and 10 000 bending cycles.

引用

页码：3791 / 3795

页数：5

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