Di-Chromatic InGaN Based Color Tuneable Monolithic LED with High Color Rendering Index

被引：1

作者：

Yadav, Amit ^{[1
]}

Titkov, Ilya E. ^{[2
]}

Sakharov, Alexei V. ^{[3
]}

Lundin, Wsevolod V. ^{[3
]}

Nikolaev, Andrey E. ^{[3
]}

Sokolovskii, Grigorii S. ^{[3
,4
]}

Tsatsulnikov, Andrey F. ^{[3
]}

Rafailov, Edik U. ^{[1
]}

机构：

[1] Aston Univ, AIPT, Optoelect & Biomed Photon Grp, Birmingham B4 7ET, W Midlands, England

[2] Ostendo Technol Inc, Nanotechnol Lab, 6185 Paseo Norte, Carlsbad, CA 92011 USA

[3] Ioffe Inst, Phys Semicond Heterostruct Lab, 26 Politekhn Skaya Str, St Petersburg 194021, Russia

[4] St Petersburg State Electrotech Univ LETI, Optoelect Dept, 5 Prof Popova Str, St Petersburg 197022, Russia

来源：

APPLIED SCIENCES-BASEL | 2018年 / 8卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

monolithic LED; high CRI; light-emitting diodes; color rendering; colorimetry;

D O I：

10.3390/app8071158

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This device can be tuned over a wide range of correlated color temperature (CCT) to achieve warm white (CCT = 3600 K) to cool white (CCT = 13,000 K) emission by current modulation from 2.3 A/cm(2) to 12.9 A/cm(2). It is also demonstrated for the first time that a color rendering index (CRI) as high as 67 can be achieved with such a dichromatic source. The observed CCT and CRI tunability is associated with the spectral power evolution due to the pumping-induced carrier redistribution.

引用

页数：8

共 25 条

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