Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors

被引：0

作者：

Kumar, Sandeep ^{[1
]}

Bin Dolmanan, Surani ^{[2
]}

Tripathy, Sudhiranjan ^{[2
]}

Muralidharan, Rangarajan ^{[1
]}

Nath, Digbijoy Neelim ^{[1
]}

机构：

[1] Indian Inst Sci, Ctr Nano Sci & Engn, CV Raman Rd, Bengaluru 560012, Karnataka, India

[2] ASTAR, Inst Mat Res & Engn IMRE, 2 Fusionopolis Way, Singapore 138634, Singapore

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2020年 / 217卷 / 05期

关键词：

Baliga figure of merit; high electron mobility transistors; 2D electron gas; 3D technology computer-aided design; FIELD; HEMTS;

D O I：

10.1002/pssa.201900766

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Herein, a unique device-design strategy is reported for increasing the breakdown voltage and hence Baliga figure of merit (BFOM) of III-nitride high electron mobility transistors (HEMTs) by engineering the gate edge toward the drain. The breakdown of such devices with meandering gate-drain access region (M-HEMT) are found to be 62% more compared with that of conventional HEMT whereas the on-resistance suffers by 76%, leading to an overall improvement in the BFOM for by 28%. The 3D technology computer-aided design simulations show that the decrease in the peak electric field at the gate edge was responsible for increased breakdown voltage.

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页数：4

相关论文

共 16 条

[1] High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm [J].

Bajaj, Sanyam ;

Allerman, Andrew ;

Armstrong, Andrew ;

Razzak, Towhidur ;

Talesara, Vishank ;

Sun, Wenyuan ;

Sohel, Shahadat H. ;

Zhang, Yuewei ;

Lu, Wu ;

Arehart, Aaron R. ;

Akyol, Fatih ;

Rajan, Siddharth .

IEEE ELECTRON DEVICE LETTERS, 2018, 39 (02) :256-259

[2] 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic ON-Resistance [J].

Chu, Rongming ;

Corrion, Andrea ;

Chen, Mary ;

Li, Ray ;

Wong, Danny ;

Zehnder, Daniel ;

Hughes, Brian ;

Boutros, Karim .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (05) :632-634

[3] High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates [J].

Dora, Y. ;

Chakraborty, A. ;

McCarthy, L. ;

Keller, S. ;

DenBaars, S. P. ;

Mishra, U. K. .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (09) :713-715

[4]

Kim WS, 2010, INTERNATIONAL CONFERENCE ON CONTROL, AUTOMATION AND SYSTEMS (ICCAS 2010), P237

[5]

Kim Y. S., 2012, IEEE ICC

[6] Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using AlxGa1-xN/GaN High Electron Mobility Transistor Structures on Si (111) [J].

Kumar, Sandeep ;

Pratiyush, Anamika Singh ;

Bin Dolmanan, Surani ;

Tan, Hui Ru ;

Tripathy, Sudhiranjan ;

Muralidharan, Rangarajan ;

Nath, Digbijoy Neelim .

ACS APPLIED ELECTRONIC MATERIALS, 2019, 1 (03) :340-345

[7] UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio >107 [J].

Kumar, Sandeep ;

Pratiyush, Anamika Singh ;

Dolmanan, Surani B. ;

Tripathy, Sudhiranjan ;

Muralidharan, Rangarajan ;

Nath, Digbijoy N. .

APPLIED PHYSICS LETTERS, 2017, 111 (25)

[8] Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer [J].

Kumar, Sandeep ;

Gupta, Priti ;

Guiney, Ivor ;

Humphreys, Colin J. ;

Raghavan, Srinivasan ;

Muralidharan, R. ;

Nath, Digbijoy N. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (12) :4868-4874

[9] Terahertz composite right-left handed transmission-line metamaterial waveguides [J].

Liu, Zhijun ;

Hon, Philip W. C. ;

Tavallaee, Amir A. ;

Itoh, Tatsuo ;

Williams, Benjamin S. .

APPLIED PHYSICS LETTERS, 2012, 100 (07)

[10] Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors [J].

Lu, Bin ;

Piner, Edwin L. ;

Palacios, Tomas .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (04) :302-304