GaN High Frequency Small Switching Power Module

被引：2

作者：

Wu, Jian-Hua ^{[1
]}

He, Wei ^{[1
]}

Li, Jian ^{[1
]}

Liu, XinKe ^{[2
]}

机构：

[1] Shenzhen Univ, Coll Elect & Informat Engn, Shenzhen, Peoples R China

[2] Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen, Peoples R China

来源：

2020 IEEE 2ND INTERNATIONAL CONFERENCE ON CIRCUITS AND SYSTEMS (ICCS 2020) | 2020年

基金：

中国国家自然科学基金;

关键词：

GaN transistors; high frequency; high power density; miniaturization; switching power supplies;

D O I：

10.1109/ICCS51219.2020.9336614

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With the development of modern electronic power technology, how to solve the miniaturization of switching power supply modules is the problem of technological development. As the GaN HEMT (Gallium Nitride High Electron Mobility Transistor) device as the third generation of semiconductor devices with high current density, small parasitic capacitance and other advantages, making it in the field of switching power supply to solve the high-frequency, miniaturization, improve the power density of the problem, provides a new solution ideas. In this paper, a switching power supply topology circuit structure is used in which gallium nitride power transistors are used instead of switching tubes. At the drive stage, the influence of parasitic parameters on the drive stage signal is analyzed by simulation software to improve the design of the drive signal circuit. The control scheme employs soft-switching technology to implement a compact, high-frequency, high power density power module based on GaN power devices.

引用

页码：101 / 104

页数：4

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