PAE improvement of PCS MMIC power amplifier with a bias control circuit

被引：0
|
作者：
Kim, JH [1 ]
Kim, JH [1 ]
Noh, YS
Kim, SG
Park, CS
机构：
[1] Informat & Commun Univ, Sch Engn, Taejon, South Korea
[2] Joongbu Univ, Dept Informat & Commun, Seoul, South Korea
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2003年 / E86C卷 / 04期
关键词：
power amplifier; bias control circuit; personal communications services (PCS); heterojunction bipolar transistor (HBT);
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high efficient HBT MMIC power amplifier with a new on-chip bias control circuit was proposed for PCS applications. By adjusting the quiescent current in accordance with the output power levels, the average power usage efficiency of the power amplifier is improved by a factor of 1.4. The bias controlled power amplifier, depending on low (high) output power levels, shows 62(103) mA of quiescent current, 16(28) dBm output power with 7.5(35.4)% of power-added efficiency (PAE), -46(-45) dBc of adjacent-channel power ratio (ACPR), and 23.7(26.9) dB of gain.
引用
收藏
页码：672 / 675
页数：4
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