PAE improvement of PCS MMIC power amplifier with a bias control circuit

被引：0
|
作者：
Kim, JH [1 ]
Kim, JH [1 ]
Noh, YS
Kim, SG
Park, CS
机构：
[1] Informat & Commun Univ, Sch Engn, Taejon, South Korea
[2] Joongbu Univ, Dept Informat & Commun, Seoul, South Korea
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2003年 / E86C卷 / 04期
关键词：
power amplifier; bias control circuit; personal communications services (PCS); heterojunction bipolar transistor (HBT);
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high efficient HBT MMIC power amplifier with a new on-chip bias control circuit was proposed for PCS applications. By adjusting the quiescent current in accordance with the output power levels, the average power usage efficiency of the power amplifier is improved by a factor of 1.4. The bias controlled power amplifier, depending on low (high) output power levels, shows 62(103) mA of quiescent current, 16(28) dBm output power with 7.5(35.4)% of power-added efficiency (PAE), -46(-45) dBc of adjacent-channel power ratio (ACPR), and 23.7(26.9) dB of gain.
引用
收藏
页码：672 / 675
页数：4
相关论文
共 50 条
  • [31] A 4-W K-Band 40% PAE Three-Stage MMIC Power Amplifier
    Duffy, Maxwell R.
    Lasser, Gregor
    Roberg, Michael
    Popovic, Zoya
    2018 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS), 2018, : 144 - 147
  • [32] An X-Band High-Power and High-PAE PHEMT MMIC Power Amplifier for Pulse and CW Operation
    Chu, Chen-Kuo
    Huang, Hou-Kuei
    Liu, Hong-Zhi
    Lin, Che-Hung
    Chang, Ching-Hsueh
    Wu, Chang-Luen
    Chang, Chian-Sern
    Wang, Yeong-Her
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2008, 18 (10) : 707 - 709
  • [33] An MMIC smart power amplifier of 21% PAE at 16 dBm power level for W-CDMA mobile communication terminals
    Kim, JH
    Kim, JH
    Noh, YS
    Kim, YS
    Kim, SG
    Park, CS
    GAAS IC SYMPOSIUM - 24TH ANNUAL, TECHNICAL DIGEST 2002, 2002, : 181 - 184
  • [34] An adaptive protection circuit for power amplifier ruggedness improvement
    Karoui, W
    Riondet, P
    Parra, T
    Montoriol, G
    2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Papers, 2005, : 433 - 436
  • [35] A bias circuit for the thermal stability of GaAs HBT power amplifier
    Ma, Yuanbo
    Wu, Zhaohui
    Li, Bin
    Chen, Zhijian
    ELECTRONICS LETTERS, 2021, 57 (22) : 839 - 841
  • [36] High efficiency 5GHz CMOS power amplifier with adaptive bias control circuit
    Eo, Y
    Lee, K
    2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2004, : 575 - 578
  • [37] A common power-stage cellular/PCS/W-CDMA triple-band MMIC power amplifier
    Kim, KY
    Kim, JH
    Noh, YS
    Park, CS
    BOSTON 2003 RADIO & WIRELESS RAWCON CONFERENCE, PROCEEDINGS, 2003, : 285 - 288
  • [38] IMD elimination and ACPR improvement for an 800 MHz HBT MMIC power amplifier
    Ali, F
    Moazzam, MR
    Aitchison, C
    1998 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, 1998, : 69 - 71
  • [39] Linearised HBT MMIC power amplifier with partially RF coupled active bias circuit for W-CDMA portable terminals applications
    Kim, JH
    Kim, JH
    Noh, YS
    Park, CS
    ELECTRONICS LETTERS, 2003, 39 (10) : 781 - 783
  • [40] A 30W, 46% PAE S-Band GaN HEMT MMIC Power Amplifier for Radar Applications
    Jardel, O.
    Olivier, M.
    Lancereau, D.
    Aubry, R.
    Chartier, E.
    Sarazin, N.
    Poisson, M. -A. Di Forte
    Piotrowicz, S.
    Stanislawiak, M.
    Rimbert, D.
    Delage, S. L.
    Eudeline, P.
    2012 42ND EUROPEAN MICROWAVE CONFERENCE (EUMC), 2012, : 1019 - 1022
12345