PAE improvement of PCS MMIC power amplifier with a bias control circuit

被引：0
|
作者：
Kim, JH [1 ]
Kim, JH [1 ]
Noh, YS
Kim, SG
Park, CS
机构：
[1] Informat & Commun Univ, Sch Engn, Taejon, South Korea
[2] Joongbu Univ, Dept Informat & Commun, Seoul, South Korea
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2003年 / E86C卷 / 04期
关键词：
power amplifier; bias control circuit; personal communications services (PCS); heterojunction bipolar transistor (HBT);
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high efficient HBT MMIC power amplifier with a new on-chip bias control circuit was proposed for PCS applications. By adjusting the quiescent current in accordance with the output power levels, the average power usage efficiency of the power amplifier is improved by a factor of 1.4. The bias controlled power amplifier, depending on low (high) output power levels, shows 62(103) mA of quiescent current, 16(28) dBm output power with 7.5(35.4)% of power-added efficiency (PAE), -46(-45) dBc of adjacent-channel power ratio (ACPR), and 23.7(26.9) dB of gain.
引用
收藏
页码：672 / 675
页数：4
相关论文
共 50 条
  • [1] A bias controlled HBT MMIC power amplifier with improved PAE for PCS applications
    Kim, JH
    Kim, JH
    Noh, YS
    Park, CS
    2002 3RD INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, 2002, : 725 - 728
  • [2] PCS/W-CDMA dual-band MMIC power amplifier with a newly proposed linearizing bias circuit
    Noh, YS
    Park, CS
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2002, 37 (09) : 1096 - 1099
  • [3] Low dissipation power and high linearity PCS power amplifier with adaptive gate bias control circuit
    Youn, KJ
    Kim, B
    Lee, CS
    Maeng, SJ
    Lee, JJ
    Pyun, KE
    Park, HM
    ELECTRONICS LETTERS, 1996, 32 (17) : 1533 - 1535
  • [4] High Gain and High PAE Power Amplifier by Employing Adaptive Bias Control Circuit for Resonant WPT
    Hwang, Hyunwook
    Yang, Seungin
    Seo, Chulhun
    2012 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC 2012), 2012, : 496 - 498
  • [5] Improvement of PAE in doherty amplifier using dual bias control and PBG structure
    Kim, Hyoungjun
    Seo, Chulhun
    PIERS 2007 BEIJING: PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM, PTS I AND II, PROCEEDINGS, 2007, : 940 - +
  • [6] Linearized InGaP/GaAs HBT MMIC power amplifier with active bias circuit
    Noh, YS
    Park, CS
    RAWCON 2001: IEEE RADIO AND WIRELESS CONFERENCE, PROCEEDINGS, 2001, : 249 - 252
  • [7] An intelligent power amplifier MMIC using a new adaptive bias control circuit for W-CDMA applications
    Noh, YS
    Park, CS
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (06) : 967 - 970
  • [8] Design of MMIC power amplifier using power HEMT for PCS phones
    Youn, KK
    Rhee, JK
    Cho, HC
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S905 - S909
  • [9] Bias circuit for high yield self-bias MMIC amplifier for APAAs
    Yamanaka, K
    Mori, K
    Ikematsu, H
    Sasaki, Y
    Nakayama, M
    2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2003, : 121 - 124
  • [10] Ku-band MMIC Power Amplifier with On-chip Compensation Gate Bias Circuit
    Noh, Y. S.
    Yom, I. B.
    APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5, 2008, : 142 - 145
12345