Effect of substrate temperature on the ZnO thin films as TCO in solar cells grown by MOCVD technique

被引：8
|
作者：
Chen Xin-Liang [1 ]
Xue Jun-Ming
Zhang De-Kun
Sun Jian
Ren Hui-Zhi
Zhao Ying
Geng Xin-Hua
机构：
[1] Nankai Univ, Inst Photoelect Thin Film Devices & Tech, Tianjin 300071, Peoples R China
[2] Nankai Univ, Tianjin Key Lab, Key Lab Optoelect Informat Sci & Technol, Minist Educ, Tianjin 300071, Peoples R China
来源：
ACTA PHYSICA SINICA | 2007年 / 56卷 / 03期
关键词：
MOCVD; ZnO film; transparent conductive oxide; solar cell;
D O I：
10.7498/aps.56.1563
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Microstructural, optical and electrical properties of updoped-ZnO films grown by metal organic chemical vapor deposition at different substrate temperature were investigated. XRD spectra and SEM photos indicate that the substrate temperature plays an important role on the microstructure of ZnO films. Morphological transition takes place obviously at around 175 degrees C. The morphology of the ZnO films shows sphere-like structure at low temperature ( < 175 degrees C) and then changes from pyramid-like to rock-like structure at higher temperature ( > 177 degrees C). The grain size of ZnO films grows up with the increase of substrate temperature. The high mobility (17.96 cm(2)/Vs) and low resistivity (3.28 x 10(-2) Omega. cm) at 177 degrees C have been obtained for undoped-ZnO film deposited on glass substrate. By further optimizing the structure and B-doping, ZnO film as front electrode will be applied in solar cell soon.
引用
收藏
页码：1563 / 1567
页数：5
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