High-power ion beam sources for industrial application

被引:47
作者
Remnev, GE
Isakov, IF
Opekounov, MS
Kotlyarevsky, GI
Kutuzov, VL
Lopatin, VS
Matvienko, VM
Ovsyannikov, MY
Potyomkin, AV
Tarbokov, VA
机构
[1] Inst Nucl Phys, Tomsk 634050, Russia
[2] Linetron Sci Ind Enterprise, Nizhnii Novgorod 603107, Russia
关键词
high-power ion beams; surface modification; short pulse ion implantation;
D O I
10.1016/S0257-8972(97)00116-3
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Two sources of high-power ion beams of nanosecond duration are described, a MUK and a TEMP unit. They generated ions with energies of up to 150 and 300 keV, respectively, and the pulse duration was 20-200 and 50 ns, respectively. For the MUK unit, beam parameters for heavy ion implantation (Aln+, Mgn+, Fen+, Wn+, etc.) were as follows: current density ranging from 1 to 10 A cm(-2) and total ion flux energy up to 20 J. For the TEMP unit, the following beam parameters were used for H+ and Cn+ ions: current density 40-200 A cm(-2) and total ion flux energy 0.3-0.5 kJ. The sources are powered by various diode systems and can be applied in material science for scientific research and technology. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:103 / 109
页数:7
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