Magnetocohesion of nanowires

被引:4
作者
Bogachek, EN [1 ]
Scherbakov, AG [1 ]
Landman, U [1 ]
机构
[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
关键词
D O I
10.1103/PhysRevB.62.10467
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The cohesive force and electronic conductance in nanowires modeled by soft- and hard-wall confining potentials, under the influence of a magnetic field (magnetocohesion) and in the linear and nonlinear (finite applied voltage) regimes, are studied. The appearance of force oscillations as a function of the magnetic field and their correlation with the corresponding characteristics of the electronic conductance are demonstrated. For materials with a strong Fermi-surface anisotropy (e.g., bismuth), it is predicted that when the crystallographic axis associated with the largest diagonal element of the effective-mass tensor is aligned along the direction of the wire, the cohesive force increases dramatically (by an order of magnitude) compared to the case when that axis is perpendicular to the wire direction.
引用
收藏
页码:10467 / 10473
页数:7
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