Enhanced gate induced drain leakage current in HfO2 MOSFETs due to remote interface trap-assisted Tunneling

被引：0
|
作者：
Gurfinkel, M. [1 ]
Suehle, J. S. [2 ]
Bemstein, J. B. [1 ]
Shapira, Yoram [1 ,3 ]
机构：
[1] Univ Maryland, Dept Mech Engn, College Pk, MD 20742 USA
[2] NIST, Div Semicond Elect, Gaithersburg, MD USA
[3] Tel Aviv Univ, Sch EE, Tel Aviv 66978, Israel
来源：
2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2006年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-kappa dielectric gate stack MOSFETs have been characterized by separating the transversal and lateral electric field contributions to the substrate current. The results show that at low gate biases the substrate current is dominated by a trap-assisted tunneling component denoted by gate induced drain leakage (GIDL) current, which is not observed in conventional SiO2 devices. Ultra-fast substrate current measurements rule out transient charging of the gate oxide as the cause of this component.. A physical model of the observed substrate current dependence is proposed.
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页码：483 / +
页数：2
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