Enhanced gate induced drain leakage current in HfO2 MOSFETs due to remote interface trap-assisted Tunneling

被引：0
|
作者：
Gurfinkel, M. [1 ]
Suehle, J. S. [2 ]
Bemstein, J. B. [1 ]
Shapira, Yoram [1 ,3 ]
机构：
[1] Univ Maryland, Dept Mech Engn, College Pk, MD 20742 USA
[2] NIST, Div Semicond Elect, Gaithersburg, MD USA
[3] Tel Aviv Univ, Sch EE, Tel Aviv 66978, Israel
来源：
2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-kappa dielectric gate stack MOSFETs have been characterized by separating the transversal and lateral electric field contributions to the substrate current. The results show that at low gate biases the substrate current is dominated by a trap-assisted tunneling component denoted by gate induced drain leakage (GIDL) current, which is not observed in conventional SiO2 devices. Ultra-fast substrate current measurements rule out transient charging of the gate oxide as the cause of this component.. A physical model of the observed substrate current dependence is proposed.
引用
收藏
页码：483 / +
页数：2
相关论文
共 50 条
  • [1] Enhanced gate induced drain leakage current in HfO2 MOSFETs
    Gurfinkel, Moshe
    Suehle, John S.
    Shapira, Yoram
    MICROELECTRONIC ENGINEERING, 2009, 86 (11) : 2157 - 2160
  • [2] Investigation into Trap-assisted Tunneling Drain Leakage Current in NMOSFETs
    Xing Dezhi
    Liu Hongxia
    Li Kaicheng
    2009 IEEE 8TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS, 2009, : 1031 - +
  • [3] INTERFACE-TRAP EFFECT ON GATE INDUCED DRAIN LEAKAGE CURRENT IN SUBMICRON N-MOSFETS
    WANG, TH
    HUANG, CM
    CHANG, TE
    CHOU, JW
    CHANG, CY
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) : 2475 - 2477
  • [4] Characterizing traps causing random telegraph noise during trap-assisted tunneling gate-induced drain leakage
    Yoo, Sung-Won
    Shin, Joonha
    Seo, Youngsoo
    Kim, Hyunsuk
    Jeon, Sangbin
    Kim, Hyunsoo
    Shin, Hyungcheol
    SOLID-STATE ELECTRONICS, 2015, 109 : 42 - 46
  • [5] Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor
    蒋智
    庄奕琪
    李聪
    王萍
    刘予琪
    Chinese Physics B, 2016, (02) : 467 - 471
  • [6] Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor
    Jiang, Zhi
    Zhuang, Yi-Qi
    Li, Cong
    Wang, Ping
    Liu, Yu-Qi
    CHINESE PHYSICS B, 2016, 25 (02)
  • [7] Hot Carrier Effect on Gate-Induced Drain Leakage Current in n-MOSFETs with HfO2/Ti1-xNx Gate Stacks
    Dai, Chih-Hao
    Chang, Ting-Chang
    Chu, Ann-Kuo
    Kuo, Yuan-Jui
    Ho, Szu-Han
    Hsieh, Tien-Yu
    Lo, Wen-Hung
    Chen, Ching-En
    Shih, Jou-Miao
    Chung, Wan-Lin
    Dai, Bai-Shan
    Chen, Hua-Mao
    Xia, Guangrui
    Cheng, Osbert
    Huang, Cheng Tung
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2012, 15 (06) : H211 - H214
  • [8] A recombination- and trap-assisted tunneling model for stress-induced leakage current
    Ielmini, D
    Spinelli, AS
    Lacaita, AL
    Martinelli, A
    Ghidini, G
    SOLID-STATE ELECTRONICS, 2001, 45 (08) : 1361 - 1369
  • [9] Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism
    Chou, AI
    Lai, K
    Kumar, K
    Chowdhury, P
    Lee, JC
    APPLIED PHYSICS LETTERS, 1997, 70 (25) : 3407 - 3409
  • [10] Modeling of Forward Gate Leakage Current in MOSHEMT Using Trap-Assisted Tunneling and Poole-Frenkel Emission
    Swain, Raghunandan
    Jena, Kanjalochan
    Lenka, Trupti Ranjan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (06) : 2346 - 2352
12345