A 4.5-5.8 GHz differential LC VCO using 0.35 μm SiGe BiCMOS technology

被引：1
|
作者：
Esame, Onur [1 ]
Tekin, Ibrahim [1 ]
Gurbuz, Yasar [1 ]
机构：
[1] Sabanci Univ, Fac Engn & Nat Sci, TR-34956 Istanbul, Turkey
来源：
2006 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE | 2006年
关键词：
VCO; SiGeBiCMOS; WLAN; differential tuning; RFIC;
D O I：
10.1109/EMICC.2006.282671
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, design and realization of a 4.5-5.8 GHz, -G(m) LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is implemented with AMS 0.35 mu m-SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). A linear, 1300 MHz tuning range is measured with on-chip, accumulation-mode varactors. Fundamental frequency output power changes between 1.6 dBm and 0.9 dBm, depending on the tuning voltage. The circuit draws 17 mA from 3.3 V supply, including buffer circuits. Post-layout simulations of the VCO led to 110.7 dBc/Hz at 1MHz offset from 5.4 GHz carrier frequency and -113.4 dBc/Hz from 4.2 GHz carrier frequency of phase noise. The circuit occupies an area of 0.6 mm(2), including RF and DC pads.
引用
收藏
页码：417 / +
页数：2
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