Direct extraction of LDMOS small signal parameters from off-state measurements

被引：25

作者：

Gaddi, R

Tasker, PJ

Pla, JA

机构：

[1] Cardiff Univ, Cardiff CF24 3TF, S Glam, Wales

[2] Motorola Inc, Wireless Infrastruct Syst Div, Tempe, AZ 85284 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 23期

关键词：

D O I：

10.1049/el:20001345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A small signal parameter extraction procedure is presented suitable for power LDMOSFET devices for radio frequency applications. Small signal measurements on the nonconducting device, i.e. biased in off-state, are manipulated analytically in one single extraction step. The parasitic series resistances and inductances and the device intrinsic capacitances at varying biasing voltages are obtained.

引用

页码：1964 / 1966

页数：3