Efficient flexible thin film silicon module on plastics for indoor energy harvesting

被引：36

作者：

Foti, M. ^{[1
]}

Tringali, C. ^{[1
]}

Battaglia, A. ^{[2
]}

Sparta, N. ^{[1
,2
,3
]}

Lombardo, S. ^{[3
]}

Gerardi, C. ^{[1
]}

机构：

[1] IPD R&D STMicroelect, I-95121 Catania, Italy

[2] 3SUN, I-95121 Catania, Italy

[3] CNR, IMM, I-95121 Catania, Italy

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2014年 / 130卷

关键词：

Flexible PV; a-Si:H; Energy harvesting; SOLAR-CELLS; DEPOSITION; BIAS;

D O I：

10.1016/j.solmat.2014.07.048

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We report on flexible photovoltaic cell fabricated on polymeric substrate optimized for indoor energy harvesting. We have fabricated small area modules (up to 30 cm(2)) obtained by monolithic integration of a-Si:H p-i-n solar cells deposited by PECVD at low temperature with excellent mechanical strength, high ability of folding and very good stability. The photovoltaic thin film module is optimized for indoor light generated by indoor lamps and has efficiency as high as 9.1% on aperture area even at less than 100 lx of light intensity (under F12 fluorescent lamp spectrum). The optimized system can be used to energize thin film batteries and can be assembled in a flexible system associated with a wireless sensor network or other electronic devices. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：490 / 494

页数：5

共 18 条

[1] Amorphous silicon thin-film solar cells deposited on flexible substrates using different zinc oxide layers
Alpuim, P.
Samantilleke, A.
Marins, E.
Oliveira, F.
Cerqueira, M. F.
Rebouta, L.
Stefanov, S.
Chiussi, S.
Serra, C.
Bouree, J. E.
[J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, 2010, 7 (3-4): : 1061 - 1064
[2] Comparison between textured SnO2:F and Mo contacts with the p-type layer in p-i-n hydrogenate amorphous silicon solar cells by forward bias impedance analysis
Cannella, G.
Principato, F.
Foti, M.
Gerardi, C.
Lombardo, S.
[J]. SOLAR ENERGY, 2013, 88 : 175 - 181
[3] Carrier transport mechanism in the SnO2:F/p-type a-Si:H heterojunction
Cannella, G.
Principato, F.
Foti, M.
Di Marco, S.
Grasso, A.
Lombardo, S.
[J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (02)
[4] Simulation and study of the influence of the buffer intrinsic layer, back-surface field, densities of interface defects, resistivity of p-type silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell
Dao, Vinh Ai
Heo, Jongkyu
Choi, Hyungwook
Kim, Yongkuk
Park, Seungman
Jung, Sungwook
Lakshminarayan, Nariangadu
Yi, Junsin
[J]. SOLAR ENERGY, 2010, 84 (05) : 777 - 783
[5] Role of the back metal-semiconductor contact on the performances of a-Si:H solar cells
Foti, M.
Cannella, G.
Gerardi, C.
Di Marco, S.
Ravesi, S.
Sparta, N.
Lo Verso, S.
Principato, F.
Coffa, S.
Lombardo, S.
[J]. PHOTOVOLTAICS FOR THE 21ST CENTURY 7, 2011, 41 (04): : 15 - 20
[6] Silicon thin film solar cells deposited under 80°C
Ito, M
Koch, C
Svrcek, V
Schubert, MB
Werner, JH
[J]. THIN SOLID FILMS, 2001, 383 (1-2) : 129 - 131
[7] Structural properties of hot wire a-Si:H films deposited at rates in excess of 100 A/s
Mahan, AH
Xu, Y
Williamson, DL
Beyer, W
Perkins, JD
Vanecek, M
Gedvilas, LM
Nelson, BP
[J]. JOURNAL OF APPLIED PHYSICS, 2001, 90 (10) : 5038 - 5047
[8] Improved equivalent circuit and analytical model for amorphous silicon solar cells and modules
Merten, J
Asensi, JM
Voz, C
Shah, AV
Platz, R
Andreu, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (02) : 423 - 429
[9] EFFECT OF DEPOSITION CONDITIONS ON INTRINSIC STRESS IN A-SI-H FILMS
OZAWA, K
TAKAGI, N
ASAMA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (05): : 767 - 770
[10] The effect of surface states at the SnO2/p-a-Si:H interface
Prentice, JSC
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 262 (1-3) : 99 - 105

← 1 2 →