Exceptional surface states and topological order in Bi2Se3

被引:9
|
作者
Biswas, Deepnarayan [1 ]
Maiti, Kalobaran [1 ]
机构
[1] Tata Inst Fundamental Res, Dept Condensed Matter Phys & Mat Sci, Homi Bhabha Rd, Bombay 400005, Maharashtra, India
基金
英国工程与自然科学研究理事会;
关键词
Topological insulator; Photoemission spectroscopy; Band structure calculation; Bi2Se3; ANOMALIES; SYSTEMS; BI2TE3;
D O I
10.1016/j.elspec.2015.11.007
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
Topological insulators possess time reversal symmetry protected metallic surface states over the insulating bulk, where these surface states are expected to be immune to small disorder, chemical passivation of the surface or temperature change. However, significant discrepancy from such behavior has been found experimentally in various materials. Here, we review some of our recent results on the electronic structure of a typical topological insulator, Bi2Se3. Both, the band structure results and high-resolution angle resolved photoemission data reveal significantly different surface electronic structure for different surface terminations. Furthermore, oxygen impurity on Se terminated surface exhibits an electron doping scenario, while oxygen on Bi terminated surface corresponds to a hole-doping scenario. The intensity of the Dirac states reduces with aging indicating fragility of the topological order due to surface impurities. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:90 / 94
页数:5
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