Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors

被引：13

作者：

Takei, Yusuke ^{[1
]}

Tsutsui, Kazuo ^{[1
]}

Saito, Wataru ^{[2
]}

Kakushima, Kuniyuki ^{[1
]}

Wakabayashi, Hitoshi ^{[1
]}

Iwai, Hiroshi ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Appl Phys, Yokohama, Kanagawa 2268502, Japan

[2] Toshiba Co Ltd, Semicond & Storage Prod Co, Kawasaki, Kanagawa 2128583, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 04期

关键词：

N-TYPE GAN; HETEROSTRUCTURES; MECHANISM;

D O I：

10.7567/JJAP.55.040306

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dependence of ohmic contact resistance on the AlGaN layer thickness was evaluated for AlGaN/GaN high-electron-mobility transistor (HEMT) structures. Mo/Al/Ti contacts were formed on AlGaN layers with various thicknesses. The observed resistance characteristics are discussed on the basis of a model in which the overall contact resistance is composed of a series of three resistance components. Different dependences on the AlGaN layer thickness was observed after annealing at low temperatures (800-850 degrees C) and at high temperatures (900-950 degrees C). It was determined that lowering the resistance at the metal/ AlGaN interface and that of the AlGaN layer is important for obtaining low-resistance ohmic contacts. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

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