Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors

被引：13

作者：

Takei, Yusuke ^{[1
]}

Tsutsui, Kazuo ^{[1
]}

Saito, Wataru ^{[2
]}

Kakushima, Kuniyuki ^{[1
]}

Wakabayashi, Hitoshi ^{[1
]}

Iwai, Hiroshi ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Appl Phys, Yokohama, Kanagawa 2268502, Japan

[2] Toshiba Co Ltd, Semicond & Storage Prod Co, Kawasaki, Kanagawa 2128583, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 04期

关键词：

N-TYPE GAN; HETEROSTRUCTURES; MECHANISM;

D O I：

10.7567/JJAP.55.040306

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dependence of ohmic contact resistance on the AlGaN layer thickness was evaluated for AlGaN/GaN high-electron-mobility transistor (HEMT) structures. Mo/Al/Ti contacts were formed on AlGaN layers with various thicknesses. The observed resistance characteristics are discussed on the basis of a model in which the overall contact resistance is composed of a series of three resistance components. Different dependences on the AlGaN layer thickness was observed after annealing at low temperatures (800-850 degrees C) and at high temperatures (900-950 degrees C). It was determined that lowering the resistance at the metal/ AlGaN interface and that of the AlGaN layer is important for obtaining low-resistance ohmic contacts. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

共 50 条

[21] Influence of Growth Parameters and Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on 4-Inch Si Substrate
Tan, Shuxin
Suzue, Takaaki
Selvaraj, S. Lawrence
Egawa, Takashi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (11)
[22] Simulation study on electrical characteristic of AlGaN/GaN high electron mobility transistors with AlN spacer layer
Shrestha, Niraj Man
Li, Yiming
Chang, Edward Yi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (04)
[23] Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack
Yafune, Norimasa
Hashimoto, Shin
Akita, Katsushi
Yamamoto, Yoshiyuki
Kuzuhara, Masaaki
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (10)
[24] Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/GaN-based high electron mobility transistors
Yao, Weizhen
Wang, Lianshan
Li, Fangzheng
Meng, Yulin
Yang, Shaoyan
Wang, Zhanguo
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 34 (12)
[25] Gate leakage currents induced by thermal fluctuation on two-dimensional electron gas in AlGaN/GaN high-electron-mobility transistors
Peng, Jian
Liu, Xiwen
Ji, Dong
Lu, Yanwu
THIN SOLID FILMS, 2017, 623 : 98 - 101
[26] Two-dimensional electron gas at the AlGaN/GaN interface: Layer thickness dependence
Popok, Vladimir N.
Caban, Piotr A.
Michalowski, Pawel Piotr
Thorpe, Ryan
Feldman, Leonard C.
Pedersen, Kjeld
JOURNAL OF APPLIED PHYSICS, 2020, 127 (11)
[27] Optimization of a Common Buffer Platform for Monolithic Integration of InGaN/GaN Light-Emitting Diodes and AlGaN/GaN High-Electron-Mobility Transistors
Liu, Chao
Cai, Yuefei
Jiang, Huaxing
Lau, Kei May
JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (04) : 2092 - 2101
[28] Simulation of polarization charge on AlGaN/GaN high electron mobility transistors: Comparison to electron holography
Marino, Fabio A.
Cullen, David A.
Smith, David J.
McCartney, Martha R.
Saraniti, Marco
JOURNAL OF APPLIED PHYSICS, 2010, 107 (05)
[29] Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors
Kaushik, J. K.
Balakrishnan, V. R.
Mongia, D.
Kumar, U.
Dayal, S.
Panwar, B. S.
Muralidharan, R.
THIN SOLID FILMS, 2016, 612 : 147 - 152
[30] Charge Transport Model of gate solution AlGaN/GaN High Electron Mobility Transistors
Asgari, A.
Bonab, L. Rajabi
INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2, 2010, : 664 - 665

← 1 2 3 4 5 →