Assessment of factors limiting conversion efficiency of single-junction III-nitride solar cells

被引：3
作者：
Bulashevich, Kirill A. [1 ]
Karpov, Sergey Yu. [1 ]
机构：
[1] Soft Impact Ltd, STR Grp, St Petersburg 194156, Russia
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4 | 2014年 / 11卷 / 3-4期
关键词：
solar cells; InGaN; conversion efficiency; polarity; absorptivity; carrier lifetime; SEMICONDUCTORS;
D O I：
10.1002/pssc.201300389
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Using simulations, we have identify the major factors controlling the conversion efficiency of single-junction n-GaN/i-InxGa1-xN/p-GaN solar cells, including absorptivity of solar radiation, heterostructure polarity, composition of the InGaN active layer, and non-radiative life-times of generated electrons and holes. The interplay of these factors, their hierarchy, and the possible effect of stress relaxation in InGaN on the conversion efficiency are discussed in terms of modeling. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：640 / 643
页数：4
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