A Physics-Based Compact Model of SiC Junction Barrier Schottky Diode for Circuit Simulation

被引：9
作者：
Yin, Shan [1 ]
Gu, Yunfei [1 ]
Tseng, King Jet [2 ]
Li, Juntao [1 ]
Dai, Gang [1 ]
Zhou, Kun [1 ]
机构：
[1] China Acad Engn Phys, Inst Elect Engn, Microsyst & Terahertz Res Ctr, Chengdu 610200, Sichuan, Peoples R China
[2] Singapore Inst Technol, Singapore 138683, Singapore
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 08期
关键词：
Compact model; junction barrier Schottky (JBS) diode; parameter extraction; semiconductor physics; silicon carbide (SiC); 4H; INVERTER; 6H; ANISOTROPY; MOBILITY; 3C;
D O I：
10.1109/TED.2018.2840118
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A physics-based compact model of silicon carbide (SiC) junction barrier Schottky diode for circuit simulation is developed in this paper. The semiconductor physicsmechanism in SiC, such as temperature-dependent mobility and incomplete ionization, are considered. The detailed device parameters, including drift region concentration, drift thickness, active area, and Schottky barrier height, are modeled. Then, a datasheet-oriented parameter extraction procedure for the device parameters is presented for three kinds of commercial SiC Schottky diodes with junction barrier structure. The model is implemented in the circuit simulator PSpice. In order to verify this model, the Technology Computer-Aided Design Sentaurus simulation is conducted with the device parameters and physical models, which shows a good agreement with the PSpice simulation.
引用
收藏
页码：3095 / 3103
页数：9
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