Comparative study of UV radiation hardness of n+p and p+n duo-lateral position sensitive detectors

被引：1

作者：

Esebamen, Omeime Xerviar ^{[1
]}

Thungstrom, Goran ^{[1
]}

Nilsson, Hans-Erik ^{[1
]}

Lundgren, Anders ^{[2
]}

机构：

[1] Mid Sweden Univ, Dept Informat Technol & Media, SE-85170 Sundsvall, Sweden

[2] SiTek Electro Opt, SE-43330 Partille, Sweden

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2014年 / 68卷 / 02期

关键词：

SILICON; DAMAGE; INTERFACE; CRYSTALS;

D O I：

10.1051/epjap/2014140253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report experimental results on the degree of radiation damage in two duo-lateral position sensitive detectors (LPSDs) exposed to 193 nm and 253 nm ultraviolet (UV) beam. One of the detectors was an in-house fabricated n(+) p LPSD and the other was a commercially available p(+) n LPSD. We report that at both wavelengths, the degradation damage from the UV photons absorption caused a much more significant deterioration in responsivity in the p(+) n LPSD than in the n(+) p LPSD. By employing a simple method, we were able to visualize the radiation damage on the active area of the LPSDs using 3-dimensional graphs. We were also able to characterize the impact of radiation damage on the linearity and position error of the detectors.

引用

页数：9

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