Simulation of carbon nanotube field-effect devices

被引：0

作者：

Latessa, L ^{[1
]}

Pecchia, A ^{[1
]}

Di Carlo, A ^{[1
]}

Scarpa, G ^{[1
]}

Lugli, P ^{[1
]}

机构：

[1] Univ Roma Tor Vergata, Dept Elect Engn, I-00173 Rome, Italy

来源：

2004 4TH IEEE CONFERENCE ON NANOTECHNOLOGY | 2004年

关键词：

carbon nanotube; CNTFET; molecular transistor; MOSFET; non-equilibrium Green's function;

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Ab initio quantum mechanical numerical simulations have been used to study electronic transport in nanoscale electronic devices. We have developed a new code based on self-consistent density-functional tight-binding (DFTB) method and non-equilibrium Green's function (NEGF) formalism. Using this approach, we investigate the coherent transport properties of along semiconducting CNT when the source-drain current is modulated by a coaxial gate. Exact boundary conditions for the electrostatic potential in the coaxial gate geometry are taken into account solving in real space a 3D Poisson equation. Results stress the importance of a good electrostatic-design of the gate contact to obtain the same field-effect modulation we have in conventional planar MOSFET.

引用

页码：10 / 12

页数：3

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