Investigation of trap levels in HgCdTe IR detectors through low frequency noise spectroscopy

被引：21

作者：

Ciura, L. ^{[1
]}

Kolek, A. ^{[1
]}

Keblowski, A. ^{[2
]}

Stanaszek, D. ^{[2
]}

Piotrowski, A. ^{[2
]}

Gawron, W. ^{[2
]}

Piotrowski, J. ^{[2
]}

机构：

[1] Rzeszow Univ Technol, Dept Elect Fundamentals, Al Powstancow Warszawy 12, PL-35959 Rzeszow, Poland

[2] VIGO Syst SA, 129-133 Poznanska St, PL-05850 Ozarow Mazowiecki, Poland

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2016年 / 31卷 / 03期

关键词：

HgCdTe detectors; low frequency noise; trap levels; low frequency noise spectroscopy; DEEP-LEVEL; RECOMBINATION; GENERATION; CENTERS; TEMPERATURE; HG1-XCDXTE; DEFECTS; PHOTODETECTORS; DISLOCATIONS; CARRIERS;

D O I：

10.1088/0268-1242/31/3/035004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low frequency noise spectroscopy is a valuable tool for studying narrow gap semiconductor materials and devices. In the paper, the method of traps investigation with low frequency noise spectroscopy was presented, together with quantitative analysis of the results obtained for high-operating-temperature, fast response, Hg1-xCdxTe mid-wavelength infrared detectors. The hole trap levels in these devices are Cd-content independent and take the value E-T congruent to 140 meV or E-T congruent to 40 meV. The level at E-T congruent to 140 meV was found for almost all tested detectors. The level around E-T = 40 meV was found in two samples. Apart from the hole traps, three electron traps were also found. Their energy levels follow the trend lines E-T = 0.35 E-g(x) and E-T = 0.75 E-g(x). All trap energies are consistent with the results reported in the literature for Hg1-xCdxTe devices.

引用

页数：7

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