Controlling the electronic structure of SnO2 nanowires by Mo-doping

被引：8

作者：

Luo Zhi-Hua ^{[1
]}

Tang Dong-Sheng ^{[1
]}

Hai Kuo ^{[1
]}

Yu Fang ^{[1
]}

Chen Ya-Qi ^{[1
]}

He Xiong-Wu ^{[1
]}

Peng Yue-Hua ^{[1
]}

Yuan Hua-Jun ^{[1
]}

Yang Yi ^{[1
]}

机构：

[1] Hunan Normal Univ, Coll Phys & Informat Sci, Minist Educ, Key Lab Low Dimens Quantum Struct & Quantum Contr, Changsha 410081, Hunan, Peoples R China

来源：

CHINESE PHYSICS B | 2010年 / 19卷 / 02期

基金：

中国国家自然科学基金;

关键词：

doping; nanostructures; chemical vapor deposition processes; semiconducting materials; TIN OXIDE; THIN-FILM; NANOBELTS; OXIDATION; MOLYBDENUM; POWDERS; GROWTH;

D O I：

10.1088/1674-1056/19/2/026102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Mo-doped SnO2 (MTO) nanowires are synthesized by an in-situ doping chemical vapour deposition method. Raman scattering spectra indicate that the lattice symmetry of MTO nanowires lowers with the increase of Mo doping, which implies that Mo ions do enter into the lattice of SnO2 nanowire. Ultraviolet-visible diffuse reflectance spectra show that the band gap of MTO nanowires decreases with the increase of Mo concentration. The photoluminescence emission of SnO2 nanowires around 580 nm at room temperature can also be controlled accurately by Mo-doping, and it is extremely sensitive to Mo ions and will disappear when the atomic ratio reaches 0.46%.

引用

页数：5

共 24 条

[1] Growth mechanism and photoluminescence of the SnO2 nanotwists on thin film and the SnO2 short nanowires on nanorods [J].