Vertically emitting annular Bragg lasers using polymer epitaxial transfer

被引：32
作者：
Green, WMJ
Scheuer, J
DeRose, G
Yariv, A
机构：
[1] CALTECH, Dept Elect Engn, Pasadena, CA 91125 USA
[2] CALTECH, Dept Appl Phys, Pasadena, CA 91125 USA
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 17期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.1807970
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Fabrication of a planar semiconductor microcavity, composed of cylindrical Bragg reflectors surrounding a radial defect, is demonstrated. A versatile polymer bonding process is used to transfer active InGaAsP resonators to a low-index transfer substrate. Vertical emission of in-plane modes lasing at telecom wavelengths is observed under pulsed optical excitation with a submilliwatt threshold. (C) 2004 American Institute of Physics.
引用
收藏
页码：3669 / 3671
页数：3
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