Performance Improvement of GeTex-Based Ovonic Threshold Switching Selector by C Doping

被引：32

作者：

Wang, Lun ^{[1
]}

Cai, Wang ^{[1
]}

He, Da ^{[1
]}

Lin, Qi ^{[1
]}

Wan, Daixing ^{[1
]}

Tong, Hao ^{[1
]}

Miao, Xiangshui ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Wuhan Natl Res Ctr Optoelect, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Threshold voltage; Switches; Performance evaluation; Doping; Voltage measurement; Phase change materials; Leakage currents; Ovonic threshold switching (OTS); selector; high-density memory array; CELL;

D O I：

10.1109/LED.2021.3064857

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we fabricated a C-doped GeTex Ovonic threshold switching (OTS) selector in a via-hole structure. The material composition is simple without toxic element doping. Performance of the GeTex-based selector is improved to be comparable to commercial GeSe-based selectors through C doping. A selector with advantages of low off-current (2 nA), low threshold voltage (1.26 V) accompanying with a big voltage window (0.55 V), high selectivity (> 4.2 x 10(4)), satisfactory endurance (> 10(7) cycles with 2mAon-current), lowcycle-to-cycle V-th variation and fast operating speed (8.5 ns) was fabricated. Besides, selector with self-limited on-current character was found. Next, reasons behind off-current reduction and consistency improvement by using C doping were studied by First-principles calculations.

引用

页码：688 / 691

页数：4

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