Fourfold symmetric anisotropic magnetoresistance based on magnetocrystalline anisotropy and antiphase boundaries in reactive sputtered epitaxial Fe3O4 films

被引：37

作者：

Li, P. ^{[1
]}

Jiang, E. Y. ^{[1
]}

Bai, H. L. ^{[1
]}

机构：

[1] Tianjin Univ, Fac Sci, Inst Adv Mat Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 09期

基金：

美国国家科学基金会;

关键词：

antiphase boundaries; iron compounds; magnetic anisotropy; magnetic epitaxial layers; magnetoresistance; sputter deposition; THIN-FILMS;

D O I：

10.1063/1.3334722

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fourfold symmetric anisotropic magnetoresistance (AMR) at high fields in epitaxial Fe3O4 films, which is incompatible with the traditional twofold symmetry, was found to be independent with the current direction but associated with their magnetocrystalline anisotropy. (001)-, (110)-, and (112)-oriented Fe3O4 films show fourfold symmetry in AMR while twofold symmetry appears for (111)-oriented Fe3O4 films. The cubic magnetocrystalline anisotropy field superimposed onto the external magnetic field modifies the alignment of the spins near antiphase boundaries, leading to the oscillating scattering rate for the transport electrons across antiphase boundaries and thus the corresponding fourfold symmetry in AMR.

引用

页数：3

共 15 条

[1] Anisotropic magnetoresistance in lightly doped La2-xSrxCuO4:: Impact of antiphase domain boundaries on the electron transport -: art. no. 247003 [J].