Effects of residual arsenic incorporation during gas-source MBE growth of InGaAsP waveguides

被引：0

作者：

Wey, S ^{[1
]}

André, R ^{[1
]}

Tu, C ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, San Diego, CA 92103 USA

来源：

STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXV) | 2001年 / 2001卷 / 20期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

During a preliminary study of the growth of InP/InGaAsP/InP waveguide structures by gas source molecular beam epitaxy, it was discovered that a significant amount of unintentional incorporation of arsenic into InP layers directly above and below the quaternary layer can occur. This resulted in anomalous X-ray scans even when photoluminescence results and reflection high energy electron diffraction patterns indicated good material quality. The arsenic composition and distribution in these layers was determined by dynamic x ray simulation.

引用

页码：23 / 29

页数：7

共 8 条

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