Influence of interface states, conduction band offset, and front contact on the performance of a-SiC:H(n)/c-Si(p) heterojunction solar cells

被引：7
作者：
Qiao, Zhi [1 ]
Ji, Jian-Li [1 ]
Zhang, Yan-Li [1 ]
Liu, Hu [1 ]
Li, Tong-Kai [1 ]
机构：
[1] Shijiazhuang Tiedao Univ, Dept Math & Phys, Inst Appl Phys, Shijiazhuang 050043, Peoples R China
来源：
CHINESE PHYSICS B | 2017年 / 26卷 / 06期
基金：
国家高技术研究发展计划(863计划);
关键词：
silicon heterojunction solar cells; interface states; band offset; front contact; OPTIMIZATION;
D O I：
10.1088/1674-1056/26/6/068802
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
P-type silicon heterojunction (SHJ) solar cells with a-SiC:H(n) emitters were studied by numerical computer simulation in this paper. The influence of interface states, conduction band offset, and front contact on the performance of a-SiC:H( n)/c-Si(p)SHJ solar cells was investigated systematically. It is shown that the open circuit voltage (Voc)and fill factor (FF) are very sensitive to these parameters. In addition, by analyzing equilibrium energy band diagram and electric field distribution, the influence mechanisms that interface states, conduction band offset, and front contact impact on the carrier transport, interface recombination and cell performance were studied in detail. Finally, the optimum parameters for the a-SiC:H(n)/c-Si(p) SHJ solar cells were provided. By employing these optimum parameters, the efficiency of SHJ solar cell based on p-type c-Si was significantly improved.
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页数：7
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