Characterization of InN epilayers grown on Si(111) substrates at various temperatures by MBE

被引：9

作者：

Wang, Yan-Hsin ^{[2
]}

Chen, Wei-Li ^{[1
]}

Chen, Ming-Fei ^{[2
]}

机构：

[1] Natl Changhua Univ Educ, Dept Elect Engn, Changhua 500, Taiwan

[2] Natl Changhua Univ Educ, Dept Mechatron Engn, Changhua 500, Taiwan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2009年 / 41卷 / 10期

关键词：

InN; Plasma-assisted molecular beam epitaxy; Atomic force microscope; X-ray diffraction; Transmission electron microscopy; Photoluminescence; Carrier concentrations; Hall mobility; Raman spectra; DEPENDENT OPTICAL-PROPERTIES; MOSAIC STRUCTURE; EPITAXIAL-FILMS; BUFFER; GAN; LAYERS; ALN;

D O I：

10.1016/j.physe.2009.06.005

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

InN films have been grown by plasma-assisted molecular beam epitaxy (PAMBE) and characterized by various technologies. It was found that the structural, optical and electrical properties can be drastically improved by raising growth temperature from 440 to 525 degrees C. Grainy morphology was found in the grain size was found in atomic force microscope images. The large grain size was about 360nm for a film grown at 525 degrees C. These films exhibited Wurtzite structure with a c/a ratio ranging from 1.59 to 1.609. The dislocation densities estimated by X-ray diffraction techniques closely agreed with those analyzed by plan-view transmission electron microscopy. Photoluminescence (PL) studies confirmed near band-to-band transitions and the narrowest low-temperature PL peak width was found to be 24meV at 0.666eV. Carrier concentrations decreased from 1.44 x 10(19) to 1.66 x 10(18) cm(-3) and Hall mobility increased from 226 to 946 cm(2) V-1 s(-1) as the growth temperature is progressively increased from 440 to 525 degrees C. Raman spectra also indicated improved crystal quality as the growth temperature was raised. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1746 / 1751

页数：6

共 28 条

[1] Carrier concentration dependent optical properties of wurzite InN epitaxial films on Si(111) studied by spectroscopic ellipsometry [J].

Ahn, H ;

Shen, CH ;

Wu, CL ;

Gwo, S .

THIN SOLID FILMS, 2006, 494 (1-2) :69-73

[2] Indium nitride (InN): A review on growth, characterization, and properties [J].

Bhuiyan, AG ;

Hashimoto, A ;

Yamamoto, A .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) :2779-2808

[3] Temperature-dependent optical properties of wurtzite InN [J].

Chen, F ;

Cartwright, AN ;

Lu, H ;

Schaff, WJ .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 20 (3-4) :308-312

[4]

Chen WL, 2000, MRS INTERNET J N S R, V5, part. no.

[5] Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition [J].

Chen, Z. T. ;

Xu, K. ;

Guo, L. P. ;

Yang, Z. J. ;

Su, Y. Y. ;

Yang, X. L. ;

Pan, Y. B. ;

Shen, B. ;

Zhang, H. ;

Zhang, G. Y. .

JOURNAL OF CRYSTAL GROWTH, 2006, 294 (02) :156-161

[6] Experimental and theoretical studies of phonons in hexagonal InN [J].

Davydov, VY ;

Emtsev, VV ;

Goncharuk, IN ;

Smirnov, AN ;

Petrikov, VD ;

Mamutin, VV ;

Vekshin, VA ;

Ivanov, SV ;

Smirnov, MB ;

Inushima, T .

APPLIED PHYSICS LETTERS, 1999, 75 (21) :3297-3299

[7]

Davydov VY, 2002, PHYS STATUS SOLIDI B, V229, pR1, DOI 10.1002/1521-3951(200202)229:3<R1::AID-PSSB99991>3.0.CO

[8]

2-O

[9] THE ESTIMATION OF DISLOCATION DENSITIES IN METALS FROM X-RAY DATA [J].

GAY, P ;

HIRSCH, PB ;

KELLY, A .

ACTA METALLURGICA, 1953, 1 (03) :315-319

[10] InN layers grown on silicon substrates:: effect of substrate temperature and buffer layers [J].

Grandal, J ;

Sánchez-García, MA .

JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) :373-377

← 1 2 3 →