A low phase noise monolithic VCO in SiGeBiCMOS

被引：32
|
作者：
Mourant, JM [1 ]
Imbornone, J [1 ]
Tewksbury, T [1 ]
机构：
[1] IBM Corp, Lowell, MA USA
来源：
2000 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2000年
关键词：
D O I：
10.1109/RFIC.2000.854418
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A fully integrated, low phase noise, dual-band voltage controlled oscillator (VCO) utilizing a novel tuning scheme is reported, Coarse digital tuning is achieved using MOSFETs and fine analog tuning utilizes PN varactors, The measured phase noise is -95dBc/Hz max at 3GHz +25kHz over the whole tuning bandwidth (+/-12.5%), and the power dissipated is 22.5mW To our knowledge, these are the best results published so far.
引用
收藏
页码：65 / 68
页数：4
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