Adaptive finite element simulation of currents at microelectrodes to a guaranteed accuracy.: An E reaction at a channel microband electrode

被引：16

作者：

Harriman, K

Gavaghan, DJ

Houston, P

Süli, E

机构：

[1] Univ Oxford, Comp Lab, Oxford OX1 3QD, England

[2] Radcliffe Infirm, Nuffield Dept Anaesthet, Oxford OX2 6HE, England

[3] Univ Leicester, Dept Math & Comp Sci, Leicester LE1 7RH, Leics, England

来源：

ELECTROCHEMISTRY COMMUNICATIONS | 2000年 / 2卷 / 08期

基金：

英国医学研究理事会; 英国工程与自然科学研究理事会;

关键词：

channel microband electrodes; E reaction mechanism; adaptive finite element method; simulation; low and high flow rates;

D O I：

10.1016/S1388-2481(00)00074-6

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We extend our earlier work (K. Harriman et al., Electrochem. Commun. 2 (2000) 150) on adaptive finite element methods for disc electrodes to the case of an E reaction mechanism to the increasingly popular channel microband electrode configuration. We use the standard Galerkin finite element method for the diffusion-dominated (low-flow) case, and the streamline diffusion finite element method for the convection-dominated (high-flow) case. We demonstrate excellent agreement with previous approximate analytical results across the range of parameters of interest, on comparatively coarse meshes. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：567 / 575

页数：9

共 34 条

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