Polarization-induced electron populations

被引：35

作者：

Ridley, BK ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 07期

关键词：

D O I：

10.1063/1.1288817

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron populations induced by spontaneous and piezoelectric polarization in semiconductor heterostructures can be estimated simply by using elementary electrostatic theory. The method is illustrated for the AlGaN/GaN system in which the AlGaN barrier is either undoped, or doped n type, and the effect of a GaN overlayer is described. (C) 2000 American Institute of Physics. [S0003-6951(00)02433-5].

引用

页码：990 / 992

页数：3

共 8 条

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