SiC voids, mosaic microstructure and dislocations distribution in Si carbonized layers

被引：16

作者：

Morales, FM

Molina, SI

Araújo, D

García, R

Cimalla, V

Pezoldt, J

机构：

[1] Univ Cadiz, Dept Ciencia Mat, E-11510 Puerto Real, Cadiz, Spain

[2] Univ Cadiz, IM & QI, E-11510 Puerto Real, Cadiz, Spain

[3] Tech Univ Ilmenau, FG Nanotechnol, Zentrum Mikro & Nanotechnol, D-98684 Ilmenau, Germany

来源：

关键词：

silicon carbide (3C-SiC); Si carbonization; high-resolution transmission electron microscopy (HRTEM); rapid thermal chemical vapor deposition (RTCVD);

D O I：

10.1016/S0925-9635(02)00300-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The defect structure of SiC/Si layers obtained by carbonization of Si is reported by means of transmission electron microscopy in high-resolution (HREM) and conventional (CTEM) modes. 3C-SiC was obtained after a rapid thermal annealing treatment and good interfacial quality is reported in terms of small void dimensions and densities. Moreover, high misfit dislocation densities are observed close to the Si/SiC interface and inside the SiC layer without observable generation of threading dislocations. The mosaic grain structure is also evidenced, with low misorientation with respect to the substrate. These results are encouraging for further growth of III-N alloy heterostructures. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：1227 / 1230

页数：4

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