TEM and HRXRD analysis of LP MOVPE grown InGaP/GaAs epilayers

被引：0
作者：
Pelosi, Claudio [1 ]
Bosi, Matteo [1 ]
Attolini, Giovanni [1 ]
Germini, Fabrizio [1 ]
Frigeri, Cesare [1 ]
Prutskij, Tatiana [2 ]
机构：
[1] CNR, IMEM Inst, Parco Area Sci 37A, I-43010 Parma, Italy
[2] BUAP, Inst Ciencias, Puebla 72050, Mexico
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
InGaP/GaAs-; interfaces; structural analysis;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The diffusion phenomena at interfaces between GaAs/InGaP layers grown by low pressure MOVPE have been studied by dark field (DF) transmission Electron Microscopy (TEM) and High resolution X-ray Diffractometry (HRXRD). By comparing the results of the two techniques a mismatched layer containing P or P and In has been evidenced. The causes of this behavior are briefly discussed.
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页码：29 / +
页数：2
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