Modeling analysis of VCz growth of GaAs bulk crystals using 3D unsteady melt flow simulations

被引：6

作者：

Yakovlev, E

Smirnova, OV

Bystrova, EN

Kalaev, VV

Frank-Rotsch, C

Neubert, M

Rudolph, P

Makarov, YN

机构：

[1] STR Inc, Richmond, VA 23255 USA

[2] Soft Impact Ltd, St Petersburg 194156, Russia

[3] Ist Kristallzuchtung, D-12489 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 250卷 / 1-2期

关键词：

heat transfer; turbulent convection; computer simulation; vapor pressure controlled Czochralski method; GaAs;

D O I：

10.1016/S0022-0248(02)02239-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present, for the first time, 3D unsteady modeling of melt turbulent convection with prediction of the crystallization front geometry in vapor pressure controlled Czochralski growth of GaAs bulk crystals. A combined 2D/3D model is applied, which includes 2D computations for the entire puller providing appropriate boundary conditions for 3D unsteady simulations of flow and heat transfer in the melt, encapsulant, crystal, and crucibles. The model is verified using experimental data on the crystallization front geometry and by comparing the results obtained within the 2D and 3D approaches. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

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页码：195 / 202

页数：8

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