Molecular beam epitaxial growth of HgCdTe on CdZnTe(311)B

被引：5

作者：

Aqariden, F ^{[1
]}

Shih, HD ^{[1
]}

Turner, AM ^{[1
]}

Chandra, D ^{[1
]}

Liao, PK ^{[1
]}

机构：

[1] DRS Infrared Technol LP, Dallas, TX 75374 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 06期

关键词：

MBE; HgCdTe; CdZnTe; heteroepitaxy;

D O I：

10.1007/s11664-000-0214-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A series of n-type, indium-doped Hg1-xCdxTe (x similar to 0.225) layers were grown on Cd0.96Zn0.04Te(311)B substrates by molecular beam epitaxy (MBE). The Cd0.96Zn0.04Te(311)B substrates (2 cm x 3 cm) were prepared in this laboratory by the horizontal Bridgman method using double-zone-refined 6N source materials. The Hg1-xCdxTe(311)B epitaxial films were examined by optical microscopy, defect etching, and Hall measurements. Preliminary results indicate that the n-type Hg1-4CdxTe(311)B and Hg1.xCdxTe(211)B films (x similar to 0.225) grown by MBE have comparable morphological, structural, and electrical quality, with the best 77 K Hall mobility being 112,000 cm(2)/.Vsec at carrier concentration of 1.9 x 10(+15) cm(-3).

引用

页码：727 / 728

页数：2