Riding the crest of a new wave in memory

被引：15

作者：

Likharev, KK ^{[1
]}

机构：

[1] SUNY Stony Brook, Dept Phys, Stony Brook, NY 11794 USA

来源：

IEEE CIRCUITS & DEVICES | 2000年 / 16卷 / 04期

关键词：

D O I：

10.1109/101.857746

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

NOVORAM (nonvolatile random access memory) is a new concept for fast, bit-addressable nonvolatile memory based on crested barriers. It is a convenient new paradigm that may enable the Moore-law progress of semiconductor memory technology to be extended well into the nanoscale, terabit range. However, it still faces the challenges of CMOS-compatible deposition of high-quality, few nanometer layers of wide-bandgap semiconductors.

引用

页码：16 / 21

页数：6

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