Novel High Isolation and High Capacitance Ratio RF MEMS Switch: Design, Analysis and Performance Verification

被引：15

作者：

Deng, Zhongliang ^{[1
]}

Wang, Yucheng ^{[1
]}

Deng, Kun ^{[2
]}

Lai, Chengqi ^{[1
]}

Zhou, Jiali ^{[2
]}

机构：

[1] Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing 100876, Peoples R China

[2] Beijing Univ Posts & Telecommun, Sch Automat, Beijing 100876, Peoples R China

来源：

MICROMACHINES | 2022年 / 13卷 / 05期

关键词：

RF MEMS; high isolation; low insertion loss; high capacitance ratio;

D O I：

10.3390/mi13050646

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this paper, a novel high isolation and high-capacitance-ratio radio-frequency micro-electromechanical systems (RF MEMS) switch working at Ka-band is designed, fabricated, measured and analyzed. The proposed RF MEMS switch mainly consists of a MEMS metallic beam, coplanar waveguide (CPW) transmission line, dielectric layer and metal-insulator-metal (MIM) fixed capacitors. The measured results indicate that the insertion loss is better than 0.5 dB at 32 GHz, and the isolation is more than 35 dB at the resonant frequency. From the fitted results, the capacitance ratio is 246.3. Compared with traditional MEMS capacitive switches, this proposed MEMS switch exhibits a high capacitance ratio and provides a wonderful solution for cutting-edge performance in 5G and other high-performance applications.

引用

页数：14

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