Low-threshold continuous-wave operation of quantum-cascade lasers grown by metalorganic vapor phase epitaxy

被引:42
|
作者
Troccoli, M [1 ]
Bour, D
Corzine, S
Höfler, G
Tandon, A
Mars, D
Smith, DJ
Diehl, L
Capasso, F
机构
[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA
[2] Agilent Labs, Palo Alto, CA 94304 USA
[3] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
[4] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA
关键词
D O I
10.1063/1.1834715
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the realization of InGaAs/InAlAs quantum-cascade lasers grown by metalorganic vapor phase epitaxy operating in continuous wave with low-threshold current densities at temperatures as high as 188 K. Threshold current densities of 950 A/cm(2) and output powers of 125 mW are measured at 80 K, while 3 mW of continuous output power are measured at 180 K, with a threshold of 2.5 kA/cm(2). In pulsed mode, peak output powers of more than 0.4 W were obtained at 80 K and of 160 mW at 300 K with thresholds of 700 A/cm(2) and 2.75 kA/cm(2), respectively. (C) 2004 American Institute of Physics.
引用
收藏
页码:5842 / 5844
页数:3
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