Peculiarities of conductivity in structures delta-doped by Si on vicinal (111)A GaAs substrate

被引：0

作者：

Kulbachinskii, VA

Galiev, GB

Mokerov, VG

Lunin, RA

Rogozin, VA

Derkach, AV

Vasil'evskii, IS

机构：

[1] Moscow MV Lomonosov State Univ, Fac Phys, Low Temp Phys Dept, Moscow, Russia

[2] Russian Acad Sci, Inst Radioengn & Elect, Moscow, Russia

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期

关键词：

(111)A GaAs surface; anisotropy of conductivity; quantum wires;

D O I：

10.1016/S1386-9477(02)00738-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Novel epitaxial structures delta-doped by Si, grown by a MBE method on a vicinal (1 1 1)A substrate misoriented by 0.5degrees, 1.5degrees and 3degrees from the (1 1 1)A GaAs plane towards the [2 (1) over bar (1) over bar] direction were formed. In this way it is possible to obtain 1D channels, or at least, ID periodic modulation of the 2D structure. All samples showed p-type conductivity. It was found that the resistivity of structures R-pa along the steps of vicinal surface is lower than that of R-pe across the steps and depends on temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：172 / 173

页数：2