Photoelectric properties of the n-SnSSe-p-InSe heterojunctions

被引：2

作者：

Katerinchuk, VN ^{[1
]}

Kovalyuk, ZD ^{[1
]}

Netyaga, VV ^{[1
]}

Betsa, TV ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Mat Sci Problems, UA-274001 Chernovtsy, Ukraine

来源：

TECHNICAL PHYSICS LETTERS | 2000年 / 26卷 / 09期

关键词：

Layered Crystal; Photoelectric Property; SnS2; Optical Contact; Window Material;

D O I：

10.1134/1.1315484

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoelectric properties of the n-SnSSe-p-InSe heterojunctions were investigated. A special feature of these structures is the use of an SnS2- xSex alloy (x = 0.5) as a wide-bandgap window material, which makes it possible to shift a short-wavelength threshold (lying in the 0.8-1.0 mu m range) of the heterojunction photosensitivity band. It is demonstrated that high-quality p-n heterojunctions can be fabricated from layered crystals joined to make an optical contact. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：754 / 756

页数：3