Photoelectric properties of the n-SnSSe-p-InSe heterojunctions

被引：2
|
作者：
Katerinchuk, VN [1 ]
Kovalyuk, ZD [1 ]
Netyaga, VV [1 ]
Betsa, TV [1 ]
机构：
[1] Natl Acad Sci Ukraine, Inst Mat Sci Problems, UA-274001 Chernovtsy, Ukraine
来源：
TECHNICAL PHYSICS LETTERS | 2000年 / 26卷 / 09期
关键词：
Layered Crystal; Photoelectric Property; SnS2; Optical Contact; Window Material;
D O I：
10.1134/1.1315484
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoelectric properties of the n-SnSSe-p-InSe heterojunctions were investigated. A special feature of these structures is the use of an SnS2- xSex alloy (x = 0.5) as a wide-bandgap window material, which makes it possible to shift a short-wavelength threshold (lying in the 0.8-1.0 mu m range) of the heterojunction photosensitivity band. It is demonstrated that high-quality p-n heterojunctions can be fabricated from layered crystals joined to make an optical contact. (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码：754 / 756
页数：3
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